Comments | guyfie: Progress at work

guyfie

Progress at work

Sep 11, 2006 14:30

Samsung Electronics Co. Ltd. announced Monday (Sept. 11) it has completed the industry's first fully working prototype of a 512-Mbit Phase-change Random Access Memory (PRAM), what the company claims is expected to become the main memory device to replace high-density NOR flash memories within the next decade ( Read more... )

Comments 10

Cool techgrrl September 11 2006, 19:17:13 UTC

What was your part in all this?

Re: Cool guyfie September 11 2006, 19:22:39 UTC

My Dissertation, published in 1996, said this. It only took 10 years for someone to implement it.

Re: Cool techgrrl September 11 2006, 19:34:55 UTC

Nifty, so maybe in another 10 years this will make it's way into my router's flash memory cards. If you have ever waited for the squeeze command to finish on a Cisco, you know what I mean... it's painfully slow. You end up deleting files, which does not really delete them, and then squeezing the flash filesystem, which does the real deletion. Not having to erase before rewriting will hopefully be a win. 512Mbit is fairly small, but I suspect that will improve rapidly once they start using them for real systems.

oneiromancer666 September 13 2006, 21:04:12 UTC

What manner of campaigning did you have to do in order to bring about such implementation?

(The comment has been removed)

guyfie September 11 2006, 19:23:07 UTC

The article says I will be in 2008.

rixim September 11 2006, 22:22:03 UTC

congrats.

my nigga nilesmbari September 11 2006, 22:23:55 UTC

big guyfie in the house.

whatcha know about PRAM.

congrats

madtechie2718 September 12 2006, 10:32:34 UTC

Saw this article yesterday -

http://www.reghardware.co.uk/2006/09/11/samsung_charge_trap_flash/

And guessed the devices at the end of the article were associated with you.

So, come 2008, you get to buy da whole UP?

guyfie September 12 2006, 14:55:52 UTC

I think it's more likely I'll be able to afford to spend more time in the UP. Or Oxford!